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| 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAFX10N90A 900 Volts 10 Amps 1.1 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features * * * * * Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance * Very low thermal resistance * Reverse polarity available upon request Maximum Ratings @ 25 (unless otherwise specified) C DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ 25 C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM JC DRAIN MAX. 900 900 +/-20 +/-30 10 6 40 10 30 tbd 5.0 300 -55 to +150 -55 to +150 10 40 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts C C Amps Amps C/W Drain-to-Gate Breakdown Voltage @ TJ 25 RGS= 1 M C, Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100 C Tj= 25 C Tj= Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode @ IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Mechanical Outline GATE SOURCE Datasheet# MSC0944.PDF MSAFX10N90A Electrical Parameters @ 25 (unless otherwise specified) C DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) SYMBOL BVDSS BVDSS/TJ VGS(th) IGSS IDSS RDS(on) CONDITIONS VGS = 0 V, ID = 3 mA MIN 900 TYP. 0.6 MAX UNIT V V/ C Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) Reverse Recovery Time (Body Diode) Reverse Recovery Charge gfs Ciss Coss Crss Td(on) tr td(off) tf Qg(on) Qgs Qgd VSD trr Qrr VDS = VGS, ID = 4 mA VGS = 20VDC, VDS = 0 TJ = 25 C TJ = 125 C VDS =0.8* DSS BV TJ = 25 C VGS = 0 V TJ = 125 C VGS= 10V, ID= 5 A TJ = 25 C ID= 10 A TJ = 25 C ID= 5 A TJ = 125 C VDS 10 V; ID = 5 A VGS = 0 V, VDS = 25 V, f = 1 MHz 2.0 4.5 100 200 200 1000 1.1 1.1 2 12 4200 315 90 20 15 50 20 125 30 50 V nA A 6 S pF VGS = 10 V, VDS = 450 V, ID = 5 A, RG = 2.00 VGS = 10 V, VDS = 450 V, ID = 5 A IF = IS, VGS = 0 V IF = 10 A, -di/dt = 100 A/s, IF = 10 A, di/dt = 100 A/s, 25 C 125 C 25 C 125 C 50 50 100 50 155 45 80 1.5 250 400 ns nC V ns C 1 2 Notes (1) (2) Pulse test, t 300 s, duty cycle 2% Microsemi Corp. does not manufacture the mosfet die; contact company for details. |
Price & Availability of MSAFX10N90A
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